Preparation of oxide crystals

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having moving solid-liquid-solid region

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

117 37, 117 40, C30B 1326

Patent

active

058171720

ABSTRACT:
For the solution growth, a solvent is used which is composed of a mixture of an oxide containing at least one member of those elements which constitute the oxide crystal and a halide containing at least one member of those elements which constitute the oxide crystal. The process enables the temperature of crystal growth to be lowered to a significant extent, avoids inclusions such as impure anionic elements from getting intruded into the oxide crystal, while retaining adequate crystal growth through solution growth, and affords, in spite of an atmospheric mode of crystal growth and with the pinning force of magnetic flux used to advantage, the same level of beneficial effects as in a mode of crystal growth at a low oxygen pressure.

REFERENCES:
patent: 5055445 (1991-10-01), Belt et al.
patent: 5162297 (1992-11-01), Terashima et al.
patent: 5444040 (1995-08-01), Kojima et al.
"A Chemical And Voltammetric Study of Halogens Containing Phases of the Yttrium Barium Copper Oxide Halides".; Zakharchuk, N.F., et al; High-Temp Supercond. Proc. ICMC 190 Top-Conf. Mater. Aspect; vol. 2 pp. 725-730. 1990. * (Abstract only)|
"Superconductivity And the Structure of Yttrium Barium Copper Oxide (YBa.sub.2 Cu.sub.3 O.sub.6) Ceramics And Single Crystals Treated In Halogen Vapors;" Ospian, Yu, et al; Inst. Solid State Phs, Physical (Amsterdam); 1989 pp. 162-164. *(Abstract only|).
Koichi Watanabe, "An approach to the growth of YBa.sub.2 Cu.sub.3 O.sub.7-X single crystals by the flux method. II", Jnl of Crystal Growth, 114 (1991) pp. 269-278.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Preparation of oxide crystals does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Preparation of oxide crystals, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Preparation of oxide crystals will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-73715

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.