Preparation of novel silicon-containing photoresists for use in

Details Preparation of novel silicon-containing photoresists for use in Preparation of novel silicon-containing photoresists for use in

1991-10-23

1993-11-16

Schofer, Joseph L.

Synthetic resins or natural rubbers -- part of the class 520 ser

Synthetic resins

Polymers from only ethylenic monomers or processes of...

526279, 430331, C08F22240, C08F23008

Patent

active

052625001

ABSTRACT:
Silicon containing copolymers are mixed with diazonaphthoquinone esters to give UV photoresists for use in microlithography on integrated circuits (IC). The copolymer structure has a thermally resistant group, N-(4-hydroxyphenyl)maleimide, and an oxygen plasma resistant group, para-trialkylsilylstyrene.

REFERENCES:
patent: 3265708 (1966-08-01), Stiteler
patent: 4624909 (1986-11-01), Saotome et al.
patent: 4740561 (1988-04-01), Tsujimoto et al.
Turner et al, "High-T Base-Soluble Copolymers as Novolac Replacements for Positive Photoresists", Polymer Engineering and Science, vol. 26, No. 16 (Mid-Sep., 1986), pp. 1096-1100.
Wilkins et al, "An Organosilicon Novalac Resin for Multilevel Resist Applications", J. Vac. Sci. Technol., B3(1) (Jan.Feb. 1985), pp. 306-309.
Saotome et al, "A Silicon Containing Positive Photoresist (SIPR) for a Bilayer Resist System", J. Electrochem. Soc.: Solid-State Science and Technology, vol. 132, No. 4 (Apr. 1985), pp. 909-913.
Tarascon et al, "The Synthesis and Lithographic Evaluation of a New Organosilicon Novolac-Based Resist", Journal of Polymer Science: Part A: Polymer Chemistry, vol. 26 (1988), pp. 3173-3187.

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