Preparation of microelectromechanical system device using an...

Active solid-state devices (e.g. – transistors – solid-state diode – Responsive to non-electrical signal

Reexamination Certificate

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Details

C257SE21218, C257SE29324, C438S048000, C438S050000, C438S710000, C438S778000

Reexamination Certificate

active

07443001

ABSTRACT:
A method for preparing a microelectromechanical system (MEMS) device for subsequent processing is disclosed. The method includes establishing an anti-stiction material on exposed surfaces of the MEMS device. The exposed surfaces include at least an interior surface of a chamber and an external surface of the MEMS device. The anti-stiction material is selectively removed from at least a portion of the external surface via a plasma sputtering process under controlled conditions.

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