Preparation of lower alkyl polysilsesquioxane and formation of i

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428448, 428450, 428457, 428900, 428901, B32B 1502, B32B 900

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049885146

ABSTRACT:
A lower alkyl polysilsesquioxane having a general formula ##STR1## wherein R is CH.sub.3 is C.sub.2 H.sub.5, and n is an integer equal to about 50 to about 10,000, prepared by (a) dissolving a lower alkyl trifunctional silane in an organic solvent at a temperature of -31 20.degree. C. to -50.degree. C. to form an organic solution thereof; (b) hydrolyzing the lower alkyl trifunctional silane by dropping water into the organic solution at a temperature of -20.degree. C. to -50.degree. C. under an inert gas pressurized at 1,000 to 3,000 Pa; and (c) gradually heating the organic solution together with a water phase lying therebeneath up to a temperature of 60.degree. C. to 100.degree. C. under an inert gas pressurized at 1,000 to 3,000 Pa.
Also, a flat surfaced insulating layer of a silylated organopolysilsesquioxane having a general formula ##STR2## wherein R is an alkyl or phenyl group, and n is an integer equal to about 50 to about 2,000, preferably about 50 to about 500, formed on a circuit board having stepwise differences in height thereon, by applying an organic solution of the polymer; evaporating the solvent; and melting the polymer to flatten the surface of the polymer and curing the polymer.

REFERENCES:
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patent: 4600685 (1986-07-01), Kitakohji et al.
patent: 4657843 (1987-04-01), Fukuyama et al.
patent: 4670299 (1987-06-01), Fukuyama et al.
patent: 4719125 (1988-01-01), Anello et al.
EP 85307905-European Search Report by Examiner Depijper at The Hague on Dec. 30, 1987.
Japanese Publication to Yogyo Kyokai Shi, vol. 92, No. 5, pp. 242 to 247, published May 1, 1984.

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