Preparation of high quality strained-semiconductor...

Details Preparation of high quality strained-semiconductor... Preparation of high quality strained-semiconductor...

2011-03-01

2011-03-01

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S458000, C257SE21129

Reexamination Certificate

active

07897480

ABSTRACT:
A method for achieving a substantially defect free SGOI substrate which includes a SiGe layer that has a high Ge content of greater than about 25 atomic % using a low temperature wafer bonding technique is described. Similarly, a method for forming thin to ultra-thin strain Si, SiC, or SiC/Si layers directly on insulator substrates having a strain content in the range of about 1-5% is further described.

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