Preparation of dilute magnetic semiconductor films by metalorgan

Details Preparation of dilute magnetic semiconductor films by metalorgan Preparation of dilute magnetic semiconductor films by metalorgan

1988-09-23

1990-06-19

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG1, H01L 2120

Patent

active

049353837

ABSTRACT:
A method for preparation of a dilute magnetic semiconductor (DMS) film is provided, wherein a Group II metal source, a Group VI metal source and a transition metal magnetic ion source are pyrolyzed in the reactor of a metalorganic chemical vapor deposition (MOCVD) system by contact with a heated substrate. As an example, the preparation of films of Cd.sub.1-x Mn.sub.x Te, wherein 0.ltoreq..times..ltoreq.0.7, on suitable substrates (e.g., GaAs) is described. As a source of manganese, tricarbonyl (methylcyclopentadienyl) maganese (TCPMn) is employed. To prevent TCPMn condensation during the introduction thereof int the reactor, the gas lines, valves and reactor tubes are heated. A thin-film solar cell of n-i-p structure, wherein the i-type layer comprises a DMS, is also described; the i-type layer is suitably prepared by MOCVD.

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