Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precurs

Details Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precurs Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precurs

1995-12-12

1998-03-24

Weisstuch, Aaron

Electrolysis: processes, compositions used therein, and methods

Electrolytic coating

Forming nonelectrolytic coating after depositing...

205103, 205104, 205239, 205915, 437 5, 136264, 136265, H01L 3118, C23C 2802

Patent

active

057308527

ABSTRACT:
High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

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