Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Havin growth from molten state
Reexamination Certificate
2005-03-01
2005-03-01
Hiteshew, Felisa (Department: 1765)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth from liquid or supercritical state
Havin growth from molten state
C117S070000, C117S083000
Reexamination Certificate
active
06860942
ABSTRACT:
The present invention is directed to a process or method for preparing a metal fluoride pre-melt material of a quality suitable for the preparation and growth of metal fluoride optical monocrystals. The pre-melt material of the invention is prepared using permeable graphite crucibles having a permeability (porosity) greater than 4 cm2/s. Exemplary monocrystals prepared from pre-melts of the invention exhibited improved transmissivity and laser durability relative to monocrystals prepared from convention pre-melt materials. Impurities in the pre-melt arising from the use of scavenger/fluorinating agent in the pre-melt have been shown to be generally less than 10 ppb and be less than 1 ppb.
REFERENCES:
patent: 6093245 (2000-07-01), Hammond et al.
Holmes Paula J.
Li Qiao
Meyer-Fredholm Michele M.
Corning Incorporated
Douglas Walter M.
Hiteshew Felisa
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