Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Patent
1994-01-18
1995-04-18
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
117904, 117935, 427596, C30B 2510
Patent
active
054069068
ABSTRACT:
A crystalline silicon carbide film is grown on a heated crystalline silicon substrate by laser ablation of a pure carbon target. For substrate temperatures during deposition above 1000.degree. C. and single crystal silicon substrates the resulting SiC film is expitaxially oriented with respect to the substrate. Films of stoichiometric SiC are grown up to thicknesses of about 4000.ANG.. These films grow on top of the silicon substrate and whereas the source of carbon for the film is from the ablation plume of the carbon target the source of the silicon is from the substrate. By using a method of alternate ablation of a pure carbon and a pure silicon target, similar epitaxial films can be grown to thicknesses in excess of 1 .mu.m with part of the silicon being supplied by the ablation plume of the silicon target.
REFERENCES:
patent: 4248909 (1981-02-01), Whittaker
patent: 4446169 (1984-05-01), Castle et al.
patent: 4987007 (1991-01-01), Wajal et al.
patent: 5049405 (1991-09-01), Cheung
patent: 5098737 (1992-03-01), Collins et al.
patent: 5124310 (1992-06-01), Ovshinsky et al.
patent: 5192580 (1993-03-01), Blanchet-Fincher
patent: 5225032 (1993-07-01), Golecki
patent: 5231047 (1993-07-01), Ovshinsky et al.
patent: 5242706 (1993-09-01), Catell et al.
patent: 5246802 (1993-09-01), Kashida et al.
"Preparation of Oriented Silicon Carbide films by Laser . . . " L. Rimai, R. Ager, E. M. Logothetis, W. H. Weber & J. Hangas.
Appl. Phys. Lett 59(18), Oct. 28, 1991 The American Inst. of Physics "Formation of Silicon Carbide Layers by the Ion Beam . . . ".
Tadamasa Kimura et al., Nuclear Instruments and Methods in Physics Research, B39(198) 238-41 North Hallad, Amsterdam.
"Structural Analysis of Silicon Doped with High Doses of C.sup.3+ Ions", I. A. Bachilo, F. F. Komarov, A. P. Novikov, & S. A. Petrov, Phy. Stat. sol. (a) 109, 231 (1988) Institute of Applied Physics Problems, Belorussian State University, Minsk.
"Spectroscopic Ellipsometry Studies of Crystalline Silicon Implanted with Carbon Ions" N. V. Nguyen and K. Vedam Pennsylvania State University, J. Appl. Phys. 67(8), 15 Apr. 1990, American Inst. of Physics.
Ager Richard M.
Rimai Lajos
Weber Willes H.
Breneman R. Bruce
Ford Motor Company
Garrett Felisa
May Roger L.
Melotik Lorraine S.
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