Preparation of copper-indium-gallium-diselenide precursor films

Details Preparation of copper-indium-gallium-diselenide precursor films Preparation of copper-indium-gallium-diselenide precursor films

1997-06-05

1999-02-16

Gorgos, Kathryn

Electrolysis: processes, compositions used therein, and methods

Electrolytic coating

Forming nonelectrolytic coating after depositing...

136264, 136265, 205102, C23C 2802

Patent

active

058716300

ABSTRACT:
A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub.1-n Ga.sub.x)Se.sub.2, with the ratio of Ga/(In+Ga) being approximately 0.39.

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