Preparation of a surface for deposition of a passinating layer

Details Preparation of a surface for deposition of a passinating layer Preparation of a surface for deposition of a passinating layer

1986-06-06

1987-11-10

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG17, 148DIG119, 156643, 156651, 427 38, H01L 21306, H01L 21318

Patent

active

047057602

ABSTRACT:
A method of making a semiconductor device including forming regions of first and second conductivity types with a semiconductor junction therebetween which extends to a surface of the device, and depositing a passivating layer over the surface to overlie the junction, further comprises a pretreatment of the surface to enhance the electrical properties of the device and the effectiveness of the passivating layer. The pretreatment, carried out prior to deposition of the passivating layer, includes treating the surface with an aqueous ammonium fluoride-hydrogen fluoride solution and thereafter subjecting the surface to a plasma in an oxygen-free, nitrogen-containing ambient.

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