Preparation of a semiconductor article using an amorphous seed t

Details Preparation of a semiconductor article using an amorphous seed t Preparation of a semiconductor article using an amorphous seed t

1990-05-29

1991-03-12

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 62, 437 83, 437 89, 437 90, 148DIG150, 148DIG152, H01L 2100, H01L 2102, H01L 2120, H01L 2176

Patent

active

049993135

ABSTRACT:
There is provided a semiconductor article together with a process for producing the same which article has a plurality of semiconductor single crystal regions comprising a semiconductor single crystal region of one electroconductive type and a semiconductor single crystal region of the opposite electroconductive type on the same insulator substrate. At least the semiconductor single crystal region of one electroconductive type being provided by forming a different material which is sufficiently greater in nucleation density than the material of the insulator substrate and sufficiently fine to the extent that only one single nucleus of the semiconductor material can grow and then permitting the semiconductor material to grow around the single nucleus formed as the center.

REFERENCES:
patent: 3471754 (1969-10-01), Hoshi et al.
patent: 4661176 (1987-04-01), Manasevit
patent: 4800527 (1989-01-01), Ozaki et al.
Filby, J., Single Crystal Films of Silicon on Insulators, Brit. J. Appl. Phys., 1967, vol. 18, pp. 1357-1382.
Stern, E., Fabrication of Planar Arrays of Semiconductor Chips Separated by Insulating Barriers, IBM Tech. Dis. Bull., vol. 7, No. 11, Apr. 1965, p. 1103.

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