Preparation of 157nm transmitting barium fluoride crystals...

Details Preparation of 157nm transmitting barium fluoride crystals... Preparation of 157nm transmitting barium fluoride crystals...

2007-10-02

2007-10-02

Hiteshew, Felisa (Department: 1722)

Chemistry of inorganic compounds

Silicon or compound thereof

Oxygen containing

C117S070000, C117S081000, C117S083000

Reexamination Certificate

active

10981889

ABSTRACT:
The present invention is directed to a method of making large diameter metal fluoride sungle crystals that can be used in optical lithograpby systems, for example, excimer laser that operate below 200 nm. In addition, the invention is directed to metal fluoride single crystals suitable for use in such lithographic ststems, such fluoride crystals having a internal transmission of ≧99.9% at 193 nm and ≧99.0% at 157 nm.

REFERENCES:
patent: 6669778 (2003-12-01), Meyer-Fredholm
patent: 6782075 (2004-08-01), Pell
patent: 6894284 (2005-05-01), Mayolet et al.

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