Stock material or miscellaneous articles – Composite – Of inorganic material
Reexamination Certificate
2007-09-25
2007-09-25
Lam, Cathy (Department: 1775)
Stock material or miscellaneous articles
Composite
Of inorganic material
C428S446000, C117S089000, C117S090000, C117S104000, C117S108000
Reexamination Certificate
active
10297494
ABSTRACT:
The invention concerns a monocrystalline coating crack-free coating of gallium nitride or mixed gallium nitride and another metal, on a substrate likely to cause extensive stresses in the coating, said substrate being coated with a buffer layer, wherein: at least a monocrystalline layer of a material having a thickness ranging between 100 and 300 nm, preferably between 200 and 250 nm, and whereof crystal lattice parameter is less than the crystal lattice parameter of the gallium nitride or of the mixed gallium nitride with another metal, is inserted in the coating of gallium nitride or mixed gallium nitride with another metal. The invention also concerns the method for preparing said coating. The invention further concerns electronic and optoelectronic devices comprising said coating.
REFERENCES:
patent: 4855249 (1989-08-01), Akasaki et al.
patent: 6730943 (2004-05-01), Massies et al.
patent: 0 551 721 (1993-07-01), None
patent: 9 312546 (1997-12-01), None
patent: 9 199759 (1997-07-01), None
patent: 99 25030 (1999-05-01), None
patent: 00 16378 (2000-03-01), None
patent: 00 25353 (2000-05-01), None
S.A. Nikishin et al.: “High quality gan grown on SI(111) by gas source molecular beam epitaxy with ammonia” Applied Physics Letters, vol. 75, No. 14, pp. 2073-2075 Oct. 4, 1999.
A.T. Schremer et al.: “High electron mobility AIGaN/GaN heterostructure on (111)Si” Applied Physics Letters, vol. 76, No. 6, pp. 736-738 2000.
Grandjean Nicolas Pierre
Massies Jean Claude
Semond Fabrice
Lam Cathy
Oblon & Spivak, McClelland, Maier & Neustadt P.C.
Picogiga International SAS
Speer Timothy M.
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