Premature breakage resistant semiconductor wafer and method for

Details Premature breakage resistant semiconductor wafer and method for Premature breakage resistant semiconductor wafer and method for

1974-09-30

1976-12-21

Larkins, William D.

Metal working

Method of mechanical manufacture

Assembling or joining

29413, 29580, 219121L, 357 55, H01L 21302

Patent

active

039979644

ABSTRACT:
Disclosed is a breakage resistant semiconductor wafer and a method for the fabrication thereof. Intersecting grooves are formed on one side of the wafer to facilitate ultimate subdivision thereof. A portion, such as a peripheral portion, of the wafer remains ungrooved. The ungrooved portion substantially increases the strength of the wafer and prevents premature breakage. When it is desired to subdivide the wafer, laser scribe lines are formed on the opposite side of the wafer in registry with the grooves. In an alternate embodiment the second side of the wafer is also grooved. However, the grooves on the second side of the wafer traverse the entirety thereof.

REFERENCES:
patent: 3112850 (1963-12-01), Garibotti
patent: 3241219 (1966-03-01), Hamm
patent: 3607466 (1971-09-01), Miyazaki
patent: 3628107 (1971-12-01), Kennedy
patent: 3771028 (1973-11-01), Davis et al.
patent: 3821782 (1974-06-01), Hutson
patent: 3900864 (1975-08-01), Dapkus et al.

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