Preferentially etched epitaxial liftoff of InP material

Details Preferentially etched epitaxial liftoff of InP material Preferentially etched epitaxial liftoff of InP material

1995-03-27

1997-06-24

Chu, John S.

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

216 2, 216 95, 216 96, 117915, 438745, 438977, B44C 122, H01L 21306

Patent

active

056413815

ABSTRACT:
The present invention is directed toward a method of removing epitaxial substrates from host substrates. A sacrificial release layer of ternary material is placed on the substrate. A layer of InP is then placed on the ternary material. Afterward a layer of wax is applied to the InP layer to apply compressive force and an etchant material is used to remove the sacrificial release layer.

REFERENCES:
patent: 4686001 (1987-08-01), Okazaki
patent: 4846931 (1989-07-01), Gmitter et al.
patent: 4883561 (1989-11-01), Gmitter et al.
patent: 5073230 (1991-12-01), Maracas et al.
patent: 5201996 (1993-04-01), Gmitter et al.
patent: 5286335 (1994-02-01), Drabik et al.

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