Preferential sputtering of insulators from conductive targets

Details Preferential sputtering of insulators from conductive targets Preferential sputtering of insulators from conductive targets

1996-09-30

1998-09-22

Nguyen, Nam

Chemistry: electrical and wave energy

Apparatus

Coating, forming or etching by sputtering

20419212, 20429807, 20429814, C23C 1434

Patent

active

058109820

ABSTRACT:
Pulses of a positive voltage are superimposed onto negative dc sputtering current that is applied to the target of a dc sputtering process to create a reverse bias. This charges insulating deposits on the target to the reverse bias level, so that when negative sputtering voltage is reapplied to the target, the deposits will be preferentially sputtered away. The reverse bias pulses are provided at a low duty cycle, i.e., with a pulse width of 0.25 to 3 microseconds at a pulse rage of 40 to 200 KHz. This technique reduces or eliminates the sources for arcing. A circuit arrangement for reverse biasing provides the forward (negative) dc sputtering power as a current source, and provides the pulses of reverse (positive) voltage as a voltage source.

REFERENCES:
patent: 5286360 (1994-02-01), Szczyrbowski et al.
patent: 5427669 (1995-06-01), Drummond

Affiliated with

Also associated with

Rating

Preferential sputtering of insulators from conductive targets does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Preferential sputtering of insulators from conductive targets, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Preferential sputtering of insulators from conductive targets will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1619533