Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2007-10-30
2007-10-30
Owens, Douglas W. (Department: 2821)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S080000, C257S083000, C257S225000
Reexamination Certificate
active
10904896
ABSTRACT:
A novel Active Pixel Sensor (APS) cell structure and method of manufacture. Particularly, an image sensor APS cell having a predoped transfer gate is formed that avoids the variations of Vtas a result of subsequent manufacturing steps. According to the preferred embodiment of the invention, the image sensor APS cell structure includes a doped p-type pinning layer and an n-type doped gate. There is additionally provided a method of forming the image sensor APS cell having a predoped transfer gate and a doped pinning layer. The predoped transfer gate prevents part of the gate from becoming p-type doped.
REFERENCES:
patent: 6731337 (2004-05-01), Watanabe
patent: 6768149 (2004-07-01), Mann et al.
patent: 2004/0188727 (2004-09-01), Patrick
Ellis-Monaghan John
Johnson Jeffrey B.
Loiseau Alain
Canale Anthony J.
Owens Douglas W.
Scully , Scott, Murphy & Presser, P.C.
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