Predoped transfer gate for a CMOS image sensor

Details Predoped transfer gate for a CMOS image sensor Predoped transfer gate for a CMOS image sensor

2011-02-15

2011-02-15

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S073000, C438S286000, C438S525000, C257SE31073

Reexamination Certificate

active

07888156

ABSTRACT:
A novel CMOS image sensor Active Pixel Sensor (APS) cell structure and method of manufacture. Particularly, a CMOS image sensor APS cell having a predoped transfer gate is formed that avoids the variations of Vtas a result of subsequent manufacturing steps. According to the preferred embodiment of the invention, the CMOS image sensor APS cell structure includes a doped p-type pinning layer and an n-type doped gate. There is additionally provided a method of forming the CMOS image sensor APS cell having a predoped transfer gate and a doped pinning layer. The predoped transfer gate prevents part of the gate from becoming p-type doped.

REFERENCES:
patent: 6180535 (2001-01-01), Wu et al.
patent: 6306678 (2001-10-01), Chiang et al.
patent: 6512280 (2003-01-01), Chen et al.
patent: 6731337 (2004-05-01), Watanabe
patent: 6768149 (2004-07-01), Mann et al.
patent: 6812539 (2004-11-01), Rhodes
patent: 6818930 (2004-11-01), Mouli et al.
patent: 6878568 (2005-04-01), Rhodes et al.
patent: 6960795 (2005-11-01), Rhodes
patent: 7087944 (2006-08-01), Rhodes et al.
patent: 7537999 (2009-05-01), Han
patent: 2004/0188727 (2004-09-01), Patrick
patent: 2004/0211987 (2004-10-01), Chien et al.
patent: 2005/0001248 (2005-01-01), Rhodes
patent: 2005/0064665 (2005-03-01), Han
patent: 2008/0179639 (2008-07-01), Gambino et al.

Affiliated with

Also associated with

Rating

Predoped transfer gate for a CMOS image sensor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Predoped transfer gate for a CMOS image sensor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Predoped transfer gate for a CMOS image sensor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2648892