Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-06-21
2011-06-21
Lam, David (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185030, C365S185180, C365S185190
Reexamination Certificate
active
07965562
ABSTRACT:
In a nonvolatile memory having an array of memory cells, wherein the memory cells are individually programmable to one of a range of threshold voltage levels, there is provided a predictive programming mode in which a predetermined function predicts what programming voltage level needs to be applied in order to program a given memory cell to a given target threshold voltage level. In this way, no verify operation needs to be performed, thereby greatly improving the performance of the programming operation. In a preferred embodiment, the predetermined function is linear and is calibrated for each memory cell under programming by one or more checkpoints. The checkpoint is an actual programming voltage that programs the memory cell in question to a verified designated threshold voltage level.
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Davis , Wright, Tremaine, LLP
Lam David
SanDisk Corporation
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