Precursors having open ligands for ruthenium containing...

Details Precursors having open ligands for ruthenium containing... Precursors having open ligands for ruthenium containing...

2007-08-08

2010-10-05

Chen, Bret (Department: 1715)

Coating processes

Coating by vapor, gas, or smoke

Metal coating

C427S255310

Reexamination Certificate

active

07807223

ABSTRACT:
Ruthenium containing precursors for ruthenium containing films deposition comprising a ruthenium precursor selected from the group essentially consisting of Ru(XOp)(XCp), Ru(XOp)2, Ru(allyl)3, RuX(allyl)2, RuX2(allyl)2, Ru(CO)x(amidinate)y, Ru(diketonate)2X2Ru(diketonate)2(amidinate)2, their derivatives, and any mixture thereof.

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Li Huazhi, et al., “Vapor Deposition of Ruthenium from an Amidinate Precursor”. Journal of the Electrochemical Society, 154, (12) D642-D647 (2007).
European Search Report for EP 06 30 0864.
Lee, John P. et al. “Reactions of a Ru(II)phenyl complex with substrates that possess C-N or C-O multiple bonds: C-C bond formation, N-H bond cleavage, and decarbonylation reactions,”Organometallics, Mar. 13, 2006, vol. 25, No. 6, pp. 1500-1510.

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