Precursors for metal fluoride deposition and use thereof

Details Precursors for metal fluoride deposition and use thereof Precursors for metal fluoride deposition and use thereof

1992-01-09

1993-10-05

Reamer, James H.

Organic compounds -- part of the class 532-570 series

Organic compounds

Oxygen containing

568394, C07C 4577

Patent

active

052507408

ABSTRACT:
A method for forming a layer of a Group II or III fluoride on a semiconductor substrate (e.g. as epitaxial insulating layer) comprising vaporising a precursor (I), where M is Be, Ca, Sr, Ba or lanthanide, b and d are 0 or 1. A, B, C and D are independently (IIA) or (IIB), X being O, S, NR, PR where R is H, alkyl, perfluoroalkyl; Y is perfluoroalkyl, fluoroalkenyl, fluoroalkylamine or fluoroalkenylamine; Z is H, F, alkyl, perfluoroalkyl or perfluoroalkenyl; and then decomposing the precursor vapor to form M fluoride. A preferred precursor for CaF.sub.2 is a calcium 1,1,1,5,5,5-hexafluor-2,4-pentanedione complex where b and d are 0.

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Purdy et al, Inorg. Chem., vol. 28, pp. 2799-2803 (1989).

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