Precursors for making low dielectric constant materials with imp

Details Precursors for making low dielectric constant materials with imp Precursors for making low dielectric constant materials with imp

1997-10-24

2000-02-01

Marquis, Melvyn I.

Synthetic resins or natural rubbers -- part of the class 520 ser

Synthetic resins

From fluorine-containing reactant

528397, 528 42, 528 10, 528 15, 528 14, 528 18, 528 19, 528 23, 528 31, C08G 7324

Patent

active

060204583

ABSTRACT:
Fluorinated chemical precursors, methods of manufacture, polymer thin films with low dielectric constants, and integrated circuits comprising primarily of sp.sup.2 C-F and some hyperconjugated sp.sup.3 C-F bonds are disclosed in this invention. Precursors are disclosed for creating fluorinated silanes and siloxanes, and fluorinated hydrocarbon polymers. Thermal transport polymerization (TP), chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), high density PECVD (HPCVD), photon assisted CVD (PACVD), and plasma-photon assisted (PPE) CVD and PPETP of these chemicals provides thin films with low dielectric constants and high thermal stabilities for use in the manufacture of integrated circuits.

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