Precursors for depositing silicon containing films

Details Precursors for depositing silicon containing films Precursors for depositing silicon containing films

2007-10-30

2007-10-30

Brunsman, David M. (Department: 1755)

Compositions: coating or plastic

Coating or plastic compositions

Silicon containing other than solely as silicon dioxide or...

C556S409000, C556S413000

Reexamination Certificate

active

11513950

ABSTRACT:
A precursor composition is disclosed for use in the chemical vapor deposition of a material selected from the group consisiting of silicon oxynitride, silicon nitride, and silicon oxide. The composition comprises a hydrazinosilane of the formula:in-line-formulae description="In-line Formulae" end="lead"?[R12N—NH]nSi(R2)4-nin-line-formulae description="In-line Formulae" end="tail"?where each R1is independently selected from alkyl groups of C1to C6; each R2is independently selected from the group consisting of hydrogen, alkyl, vinyl, allyl, and phenyl; and n=1-4.

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