Precursors for CVD silicon carbo-nitride and silicon nitride...

Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching

Reexamination Certificate

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C438S793000, C438S794000, C438S795000, C438S781000, C257SE21243

Reexamination Certificate

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07875556

ABSTRACT:
Classes of liquid aminosilanes have been found which allow for the production of silicon carbo-nitride films of the general formula SixCyNz. These aminosilanes, in contrast, to some of the precursors employed heretofore, are liquid at room temperature and pressure allowing for convenient handling. In addition, the invention relates to a process for producing such films.The classes of compounds are generally represented by the formulas:and mixtures thereof, wherein R and R1in the formulas represent aliphatic groups typically having from 2 to about 10 carbon atoms, e.g., alkyl, cycloalkyl with R and R1in formula A also being combinable into a cyclic group, and R2representing a single bond, (CH2)n, a ring, or SiH2.

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