Precursors for chemical vapor deposition

Details Precursors for chemical vapor deposition Precursors for chemical vapor deposition

2002-10-25

2008-09-02

Chen, Bret (Department: 1792)

Coating processes

Coating by vapor, gas, or smoke

C427S255360, C556S051000

Reexamination Certificate

active

07419698

ABSTRACT:
Ti, Zr Hf and La precursors for use in MOCVD techniques have a ligand of the general formula OCR1(R2)CH2X, wherein R1is H or an alkyl group, R2is an optionally substituted alkyl group and X is selected from OR and NR2, wherein R is an alkyl group or a substituted alkyl group.

REFERENCES:
patent: 4758682 (1988-07-01), Collins et al.
patent: 5344948 (1994-09-01), Verkade
patent: 5395954 (1995-03-01), Soria et al.
patent: 5464656 (1995-11-01), Verkade
patent: 5508458 (1996-04-01), Zhao
patent: 5527752 (1996-06-01), Reichle et al.
patent: 5698022 (1997-12-01), Glassman et al.
patent: 5814574 (1998-09-01), McNally
patent: 5830530 (1998-11-01), Jones
patent: 5863836 (1999-01-01), Jones
patent: 5886203 (1999-03-01), Jones et al.
patent: 5900498 (1999-05-01), Winter et al.
patent: 5908947 (1999-06-01), Vaartstra
patent: 5980978 (1999-11-01), Jones et al.
patent: 6159855 (2000-12-01), Vaartstra
patent: 6248928 (2001-06-01), Jones
patent: 6277436 (2001-08-01), Stauf et al.
patent: 6280518 (2001-08-01), Itsuki et al.
patent: 6313035 (2001-11-01), Sandhu et al.
patent: 6376691 (2002-04-01), Celinska et al.
patent: 6383669 (2002-05-01), Leedham et al.
patent: 6485784 (2002-11-01), Leedham et al.
patent: 6552209 (2003-04-01), Lei et al.
patent: 6623656 (2003-09-01), Baum et al.
patent: 6627765 (2003-09-01), Giolando
patent: 6689427 (2004-02-01), Min et al.
patent: 6946395 (2005-09-01), Marsh
patent: 614867 (1994-09-01), None
patent: 2001-181288 (2001-07-01), None
patent: 2002069641 (2002-03-01), None
Chemical Abstracts, vol. 80, No. 53, Jun. 10, 1974, Columbus, OH, US; abstract No. 132732, Bharara, P.C. et al. “Reactions of titanium alkoxides with (methylamino) alchohols”. XP002236947, abstract & Zeitschrift Fuer Anorganische Und Allgemeine Chemie (1974), 403(3), 337-346, 1974.

Affiliated with

Also associated with

Rating

Precursors for chemical vapor deposition does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Precursors for chemical vapor deposition, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Precursors for chemical vapor deposition will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3989917