Precursor for semiconductor thin films and method for producing

Details Precursor for semiconductor thin films and method for producing Precursor for semiconductor thin films and method for producing

1996-05-15

1998-03-17

Weisstuch, Aaron

Metal treatment

Barrier layer stock material, p-n type

148 333, 136264, 136262, 136265, 427 74, 427 76, 437 5, 437141, 437143, 437144, 437154, 428620, 428632, 428642, 428674, H01L 3118

Patent

active

057282315

ABSTRACT:
A precursor for manufacturing a semiconductor thin film in which an oxide thin film comprising at least one element as a dopant, selected from a group which consists of Groups IA, IIA, IIB, VA, and VB elements, and Groups IB and IIIA elements which are main components of the semiconductor thin film are deposited on a substrate, or a precursor for manufacturing a semiconductor thin film which is formed by depositing a thin film of oxide comprising the Groups IB and IIIA elements on the substrate wherein the content of at least one of the Groups IB and IIIA elements is varied in the direction of film thickness, and a method for manufacturing a semiconductor thin film comprising the step of heat treating the precursor for manufacturing the semiconductor thin film in an atmosphere containing a Group VIA element. The present invention provides a precursor for manufacturing a semiconductor thin film and a method for manufacturing the semiconductor thin film using the precursor which are suitable for manufacturing a semiconductor thin film having a chalcopyrite structure that has a high and uniform energy conversion efficiency when the semiconductor thin film is used as a photoabsorptive layer of a solar cell.

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Bodegard, et al., "The Influence of Sodium on the Grain Structure of CulnSe.sub.2 Films for Photovoltaic Applications", 12th European Photovoltaic Solar Energy Conference, Apr. 1994, Amsterdam, The Netherlands, pp. 1743-1746.
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