Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2011-01-18
2011-01-18
Nguyen, Thanh (Department: 2893)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S448000, C257SE21552
Reexamination Certificate
active
07871896
ABSTRACT:
Structures and methods for precision trench formation are disclosed. In one embodiment, a method for manufacturing a semiconductor device comprises forming a first oxygen-containing region in a semiconductor substrate by performing an oxygen ion implantation to a portion of the semiconductor substrate, and oxidizing the first oxygen-containing region using oxygen contained therein by performing a thermal processing to the semiconductor substrate, where the first oxygen-containing region is converted to a first oxide region. The method further comprises forming a groove in the semiconductor substrate by eliminating the first oxide region, where the performing thermal processing comprises subjecting the first oxygen-containing region to a gas low on oxygen.
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patent: 6271092 (2001-08-01), Lee
patent: 2003/0068875 (2003-04-01), Son
patent: 59-031067 (1984-02-01), None
Inoue Fumihiko
Maruyama Takayuki
Watanabe Tomohiro
Nguyen Thanh
Spansion LLC
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