Precision programming of nonvolatile memory cells

Details Precision programming of nonvolatile memory cells Precision programming of nonvolatile memory cells

1998-11-20

2000-03-14

Nelms, David

Static information storage and retrieval

Floating gate

Particular biasing

36518503, 36518518, G11C 1606

Patent

active

060381744

ABSTRACT:
An integrated circuit memory system and method for precision hot carrier injection programming of single or plurality of nonvolatile memory cells is described. Each program cycle is followed by a verify cycle. Precision programming is achieved by incrementally changing a programming current pulse flowing between the source and drain in the memory cell during successive program cycles and a constant current during successive verify cycles. Current control and voltage mode sensing circuitry reduces circuit complexity, reduces programming cell current, lowers power dissipation, and enables page mode operation. Precision programming is useful for multilevel digital and analog information storage.

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