Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Patent
1995-02-06
1996-10-22
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
257536, 257380, H01L 2704
Patent
active
055679773
ABSTRACT:
A precision resistor, on a semiconductor substrate, formed by using two polysilicon stripes to mask the oxide etch (and ion implantation) which forms a third conductive stripe in a moat (active) area of the substrate. The sheet resistance R.sub.p and a patterned width W.sub.p of the polysilicon stripes and the patterned width W.sub.M and sheet resistance R.sub.M, are related as R.sub.p W.sub.p =2R.sub.M W.sub.M. By connecting the three stripes in parallel, a net resistance value is achieved which is independent of linewidth variation.
REFERENCES:
patent: 4717836 (1988-01-01), Doyle
patent: 4830976 (1989-05-01), Morris et al.
patent: 4845462 (1989-07-01), Van De Grift et al.
patent: 5352923 (1994-10-01), Boyd et al.
Formby Betty
Groover Robert
Hardy David B.
Limanek Robert P.
SGS - Thomson Microelectronics S.A.
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