Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth with a subsequent step acting on the...
Patent
1995-03-14
1997-01-14
Kunemund, Robert
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes of growth with a subsequent step acting on the...
117 4, 117 5, 117 20, 117930, C30B 102
Patent
active
055934943
ABSTRACT:
Process for controlling the density of oxygen precipitate nucleation centers in single crystal silicon. In the process, the single crystal silicon is annealed at a temperature of at least about 350.degree. C. to cause the formation of oxygen precipitate nucleation centers in the single crystal silicon. During the annealing step, the single crystal silicon is heated (or cooled) to achieve a first temperature, T.sub.1, which is between about 350.degree. C. and about 500.degree. C. The temperature is then increased from T.sub.1 to a second temperature, T.sub.2, which is between about 500.degree. C. and about 750.degree. C. with the average rate of temperature increase from T.sub.1 to T.sub.2 being less than about 25.degree. C. per minute. The annealing is terminated at a point in time when the oxygen precipitate nucleation centers are capable of being dissolved by heat-treating the silicon at a temperature not in excess of about 1150.degree. C.
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Kunemund Robert
MEMC Electronic Materials , Inc.
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