Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Patent
1998-12-31
2000-06-13
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
257622, 257797, 438460, 438462, H01L 23544, H01L 2906
Patent
active
060752807
ABSTRACT:
This invention discloses a novel method for separating a semiconductor wafer into a plurality of integrated circuit (IC) chips. The separation is carried out along scribe lines between the IC chips. The method includes steps of (a) forming a photoresist layer on the semiconductor wafer; (b) performing a photolithography process for removing the photoresist layer above the scribe lines between the IC chips; (c) performing an etch process for removing a dielectric layer above the scribe lines between the IC chips for exposing the scribe lines on the semiconductor wafer; (d) performing a wet chemical etch process to anisotropically etch the semiconductor wafer into a V-shaped groove in the scribe lines; and (e) applying a mechanical force to break the semi-conductor wafer along the V-shaped grooves in the scribe lines thus separating the semiconductor wafer into a plurality of IC chips.
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patent: 4567646 (1986-02-01), Ishinawa et al.
patent: 4604161 (1986-08-01), Araghi
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patent: 5128282 (1992-07-01), Ormond et al.
Chang Gene Jing-Chiang
Yung Hao-Chieh
Lin Bo-In
Mintel William
Winbond Electronics Corporation
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