Precision bias circuit for a class AB amplifier

Details Precision bias circuit for a class AB amplifier Precision bias circuit for a class AB amplifier

1996-04-01

1997-08-05

Mottola, Steven

Amplifiers

With semiconductor amplifying device

Including temperature compensation means

330296, H03F 304

Patent

active

056546726

ABSTRACT:
A novel bias circuit provides precise base emitter voltage(V.sub.BE) which tracks the temperature coefficient of an RF transistor using low cost devices. The bias circuit includes a precision current source which injects current through a P-N junction device to derive a temperature compensating reference voltage thereacross. The P-N junction device is isolated from current fluctuations using a current isolation circuit coupled between the P-N junction device and the base of the RF transistor. The diode is thereby isolated from and unaffected by changes in the base current of the RF transistor. Multiple RF transistors are biased from the single P-N junction device by replicating only a trimming potentiometer and the current isolation circuitry for each additional RF transistor to be biased.

REFERENCES:
patent: 3286138 (1966-11-01), Shockley
patent: 3906386 (1975-09-01), Hongu et al.
patent: 4092613 (1978-05-01), Boubouleix
patent: 4242598 (1980-12-01), Johnson et al.
patent: 5150076 (1992-09-01), Asazawa
patent: 5160898 (1992-11-01), Black
patent: 5220290 (1993-06-01), Black
Martin, W.L., "Temperature Sensing and Compensating Reference Voltage Supplies", IBM Tech. Disc. Bull., vol. 7, No. 5, pp. 357-358 Oct. 1964.

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