Precision bandgap circuit using high temperature coefficient...

Details Precision bandgap circuit using high temperature coefficient... Precision bandgap circuit using high temperature coefficient...

2007-10-02

2007-10-02

Nguyen, Matthew V. (Department: 2838)

Electricity: power supply or regulation systems

Self-regulating

Using a three or more terminal semiconductive device as the...

C327S539000

Reexamination Certificate

active

11190215

ABSTRACT:
Disclosed are bandgap circuits that use a resistive divider circuit to modulate the gate voltage of a reference source transistor. The reference voltage transistor is modulated at the base by a voltage that varies inversely with temperature. In this fashion, high sheet resistance poly resistors and diffusion resistors can be used that have very low process variation and minimize the use of die space.

REFERENCES:
patent: 5245273 (1993-09-01), Greaves et al.
patent: 5767664 (1998-06-01), Price
patent: 6157245 (2000-12-01), Rincon-Mora
patent: 6600302 (2003-07-01), Ghozeil et al.

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