Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2005-02-15
2005-02-15
Everhart, Caridad (Department: 2825)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S705000, C438S745000
Reexamination Certificate
active
06855639
ABSTRACT:
A high-K thin film patterning solution is disclosed to address structural and process limitations of conventional patterning techniques. Subsequent to formation of gate structures adjacent a high-K dielectric layer, a portion of the high-K dielectric layer material is reduced, preferably via exposure to hydrogen gas, to form a reduced portion of the high-K dielectric layer. The reduced portion may be selectively removed utilizing wet etch chemistries to leave behind a trench of desirable geometric properties.
REFERENCES:
patent: 6300202 (2001-10-01), Hobbs et al.
patent: 54024236 (1979-02-01), None
patent: 2153082 (1990-06-01), None
patent: 2000036572 (2000-02-01), None
patent: 2001213696 (2001-08-01), None
Barnak John
Brask Justin K.
Doczy Mark L.
Markworth Paul R.
Metz Matthew V.
Everhart Caridad
Intel Corporation
Plimier Michael D.
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