Precharge for split array ratioless ROM

Static information storage and retrieval – Read only systems – Semiconductive

Patent

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Details

365203, G11C 1700, G11C 700

Patent

active

044280670

ABSTRACT:
A semiconductor read-only memory is constructed of first and second read-only memories of the ratioless type each of which includes a plurality of MISFETs connected in series, and a logic circuit which logically combines output signals of the first and second read-only memories. When the output of the first read-only memory is to be determined by an input signal level thereof, the second read-only memory is forcibly brought into a precharge state. As a result, even when an undesirable coupling capacitor exists between an output terminal of the first read-only memory and an output terminal of the second read-only memory, the signal from the first read-only memory can be provided at the proper level.

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