Amplifiers – With semiconductor amplifying device – Including atomic particle or radiant energy impinging on a...
Patent
1997-02-21
1998-09-01
Mullins, James B.
Amplifiers
With semiconductor amplifying device
Including atomic particle or radiant energy impinging on a...
250214A, 250214AG, 359194, H03F 308
Patent
active
058015884
ABSTRACT:
The photocurrent generated by a photodiode receiving light substantially flows through a feedback resistor when the incident light intensity is low. As the incident light intensity increases, the source and drain of a FET connected in parallel to the feedback resistor establish a conducting state therebetween, whereby the photocurrent is divided into a current flowing through the feedback resistor and a current flowing through the FET connected in parallel to the feedback resistor. Accordingly, transimpedance is equivalently lowered, while the feedback resistor is restrained from lowering the output potential. When the incident light intensity is further increased, a gate bias current flows into the gate of an input-stage FET of an amplifier, whereby the photocurrent is divided into the current flowing through the feedback resistor, the current flowing through the FET connected in parallel to the feedback resistor, and the gate bias current. Accordingly, the preamplifier can operate even under a larger optical input. Thus realized is a novel configuration of a preamplifier for optical communication, from which a stable operation is expected even when the power supply voltage is lowered and which can operate at a single power source voltage as well.
REFERENCES:
patent: 5302911 (1994-04-01), Miyashita
Mullins James B.
Sumitomo Electric Industries Ltd.
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