Pre-thermal treatment cleaning process

Details Pre-thermal treatment cleaning process Pre-thermal treatment cleaning process

1995-12-07

1998-01-27

Niebling, John F.

Fishing, trapping, and vermin destroying

437248, 437939, 437946, 1566621, 134 2, 134 26, H01L 2102

Patent

active

057121982

ABSTRACT:
Process for heat-treating a silicon wafer which includes the steps of contacting the surface of the silicon wafer with an aqueous solution containing hydrofluoric acid to remove metals from the wafer surface, contacting the hydrofluoric acid treated wafers with ozonated water to grow a hydrophilic oxide layer on the surface of the silicon wafer, and heating the ozonated water treated wafers to a temperature of at least about 300.degree. C. for a duration of at least about 1 second. The concentration of each of iron, chromium, calcium, titanium, cobalt, manganese, zinc and vanadium, on the surface of the silicon wafer at the initiation of the heating being less than 1.times.10.sup.9 atoms/cm.sup.2.

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