Pre-passivated sub-micrometer gate electrodes for MESFET devices

Details Pre-passivated sub-micrometer gate electrodes for MESFET devices Pre-passivated sub-micrometer gate electrodes for MESFET devices

1984-09-05

1986-10-21

Smith, John D.

Coating processes

Electrical product produced

Condenser or capacitor

29571, 29591, 156643, 1566591, 427 84, 427 91, 430314, H01L 21285

Patent

active

046185100

ABSTRACT:
A method of fabricating sub-micrometer gates in a semiconductor device is disclosed in which a pre-passivation layer is formed over the gate region during fabrication. This pre-passivation layer protects the gate and underlying gate trough region from surface contamination during device fabrication. Sub-micrometer gate lengths are obtained by use of optical lithography, e.g., angle-shadow metal evaporation techniques and chemical lift-off methods.

REFERENCES:
patent: 3920861 (1975-11-01), Dean
patent: 4519127 (1985-05-01), Arai
patent: 4525919 (1985-07-01), Fabian

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