Power transistor with short-circuit protection

Details Power transistor with short-circuit protection Power transistor with short-circuit protection

1996-09-26

1998-03-03

Gaffin, Jeffrey A.

Electricity: electrical systems and devices

Safety and protection of systems and devices

With specific quantity comparison means

361 54, H02H 318

Patent

active

057242186

ABSTRACT:
Power transistors, especially MOSFETs and IGBTs, must be protected adequately in the ON state against a short circuit in the load circuit, in order to avoid their destruction. Until now, the power transistor was turned off if a short-circuit current appeared by providing that its gate-to-source path, in the event of a short circuit, was short-circuited through another transistor, and the power transistor was thus turned off. However, if that readjustment of the current took place too fast, the power transistor was able to be damaged by overvoltage. That is counteracted by a voltage sensor configuration, which detects the voltage change in the load path of the power transistor and reduces the potential at the control terminal connection of the other transistor if the output voltage rises.

REFERENCES:
patent: 5200878 (1993-04-01), Sasagawa et al.
"A new IGBT with a monolithic over-current protection circuit", (Yasukazu et al.), Advanced Device Technology Laboratory, Fuji Electric Corporate R&D Ltd., Japan, Session 2, Paper 2.3, pp. 31-41.

Affiliated with

Also associated with

Rating

Power transistor with short-circuit protection does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Power transistor with short-circuit protection, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power transistor with short-circuit protection will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2254494