Power transistor with self-protection against direct secondary b

Details Power transistor with self-protection against direct secondary b Power transistor with self-protection against direct secondary b

1987-09-21

1989-04-11

DeBoer, Todd E.

Electricity: electrical systems and devices

Safety and protection of systems and devices

Impedance insertion

361 91, H02H 902

Patent

active

048211362

ABSTRACT:
A power transistor with self-protection against direct secondary breakdown comprises a plurality of elementary transistors having their emitter terminals mutually connected and forming a common emitter terminal, collector terminals also mutually connected and forming a common collector terminal, and base terminals connected to at least one current source. Switches are furthermore provided selectively associated with some of the elementary transistors, preferably with one elementary transistor every two, and allowing operation of the associated elementary transistors in the saturation operating region and switching off the associated elementary transistors during high-voltage operation.

REFERENCES:
patent: 3924158 (1978-12-01), Farnsworth

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