Power transistor thermal shutdown circuit

Details Power transistor thermal shutdown circuit Power transistor thermal shutdown circuit

1985-09-09

1987-05-26

Pellinen, A. D.

Electricity: electrical systems and devices

Safety and protection of systems and devices

Circuit interruption by thermal sensing

361 87, 361 93, 323278, 323279, H02H 504

Patent

active

046690263

ABSTRACT:
A thermal shutdown circuit for use with a high power transistor which incorporates a sense emitter. A differential amplifier is driven from the transistor base and the sense emitter and has an output that is coupled to the power transistor base. When the sense emitter potential exceeds the base potential, the amplifier output will pull the base down so as to limit the current in the power transistor. For a silicon transistor, the circuit will act to limit the hottest portion of the sense emitter to a maximum of about 250.degree. C. When there are no hot spots and the sense emitter is heated uniformly, heating of the transistor will be limited to about 200.degree. C.

REFERENCES:
patent: 3103617 (1963-09-01), Schneider et al.
patent: 3796943 (1974-03-01), Nelson et al.
patent: 4146903 (1979-03-01), Dobkin
IEEE Journal of Solid-State Circuits, "New Development in IC Voltage Regulator", Robert J. Wildar, vol. SC-6, No. 1, Feb.

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