Power transistor structure with high speed integral antiparallel

Details Power transistor structure with high speed integral antiparallel Power transistor structure with high speed integral antiparallel

1988-07-19

1990-10-30

Hille, Rolf

357 43, 357 34, 357 36, H01L 2702, H01L 2972

Patent

active

049672436

ABSTRACT:
A power semiconductor device which comprises either a bipolar transistor or a MOSFET, incorporates an integral Schottky diode in antiparallel connection with the transistor for conducting reverse current through the power semiconductor device. By fabricating the diode to exhibit a lower turn-on voltage, than the P-N junction at the base and collector interface in the bipolar transistor, or at the base and drift layer interface in the MOSFET, the power semiconductor device, when in the reverse conduction mode, exhibits excellent reverse recovery characteristics and without forward voltage overshoot transients.

REFERENCES:
patent: 3391311 (1968-07-01), Lin
patent: 4441117 (1984-04-01), Zommer
patent: 4521795 (1985-06-01), Coe
patent: 4605948 (1986-08-01), Martinelli
patent: 4641174 (1987-02-01), Baliga
patent: 4783693 (1988-11-01), Alzati et al.
B. J. Baliga, Modern Power Devices, John Wiley & Sons, 1987, pp. 263-342.
Ser. No. 186,983, Ngo et al., 4/27/88.

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