Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With contact or lead
Reexamination Certificate
2011-08-09
2011-08-09
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
With contact or lead
C257S401000, C257S300000, C257S379000, C257S723000, C257S711000, C257S732000, C257S731000, C257S730000, C257S779000, C257S780000, C257S735000, C257S664000, C257S666000, C257SE23170, C257SE23175
Reexamination Certificate
active
07994630
ABSTRACT:
According to one embodiment, a power transistor package includes an electrically conductive flange configured to be connected to a source of a power transistor device. The package further includes a first terminal mechanically fastened to the flange and configured to be electrically connected to a gate of the power transistor device and a second terminal mechanically fastened to the flange and configured to be electrically connected to a drain of the power transistor device. The package also includes a bus bar mechanically fastened to the flange which extends between and connects at least two different DC bias terminals mechanically fastened to the flange. The bus bar is configured to be electrically connected to the drain via one or more RF grounded connections.
REFERENCES:
patent: 6414389 (2002-07-01), Hume et al.
patent: 6466094 (2002-10-01), Leighton et al.
patent: 6734728 (2004-05-01), Leighton et al.
patent: 2007/0024358 (2007-02-01), Perugupalli et al.
patent: 2008/0019108 (2008-01-01), Hoyer et al.
Blair Cynthia
Fowlkes Donald
Armand Marc
Coats & Bennett P.L.L.C.
Fahmy Wael M
Infineon - Technologies AG
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