Power transistor monolithic integrated structure

Details Power transistor monolithic integrated structure Power transistor monolithic integrated structure

1989-01-25

1990-07-17

Heyman, John S.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 51, 3652257, H03K 1760, H01L 27082

Patent

active

049423088

ABSTRACT:
A power transistor monolithic integrated structure produced by a bipolar-epitaxial technology includes a plurality of parallel connected transistor cellular structures each containing at least one component transistor. The base of each component transistor is coupled to a common base control conductor via a protective resistor and a fuse link which melts in the event of a defect in the transistor cell. Another fuse link is incorporated in the branch conductors leading from the collectors of respective component transistor to a common conductor web mounted on the surface of the transistor chip. All transistor cellular structures are electrically isolated one from each other during the manufacturing process.

REFERENCES:
patent: 4038677 (1977-07-01), Nagel et al.
patent: 4689494 (1987-08-01), Chen et al.
patent: 4785199 (1988-11-01), Kolodny et al.

Affiliated with

Also associated with

Rating

Power transistor monolithic integrated structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Power transistor monolithic integrated structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power transistor monolithic integrated structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-96012