Power transistor module wiring structure

Details Power transistor module wiring structure Power transistor module wiring structure

1994-04-22

1997-04-01

Brown, Peter Toby

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

With contact or lead

257691, 257692, 257724, 257797, H01L 2352, H01L 23528

Patent

active

056169558

ABSTRACT:
In packaged bridge circuit modules with power switching transistors such as IGBT's, internal wiring inductance can cause switching voltage spikes and imbalance between switching transistors. Upon inclusion of suitably arranged and configured inductance elements, internal wiring inductance can produce a counter-electromotive force during switching. To this end, an internal connecting terminal may branch from an output terminal, a bridge-shaped internal connecting terminal may be connected between an emitter circuit pattern of one power transistor and a collector circuit pattern of another power transistor, or signal terminals as auxiliary emitter terminals of two power transistors may be connected to an inductance providing region in a current path of an emitter circuit pattern.

REFERENCES:
patent: 4920405 (1990-04-01), Itoh et al.
patent: 5243217 (1993-09-01), Yamada
patent: 5306949 (1994-04-01), Yamada et al.
patent: 5347158 (1994-09-01), Matsuda et al.

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