Power transistor including a plurality of unit transistors

Details Power transistor including a plurality of unit transistors Power transistor including a plurality of unit transistors

1997-05-29

2000-06-20

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

With enlarged emitter area

257583, H01L 27082

Patent

active

060780959

ABSTRACT:
A unit transistor forming a power transistor includes a collector region, a base region, and an emitter region. A base contact portion is formed at a prescribed portion on the base region. The base region has a convex portion, which projects in the direction toward the emitter region, at a portion where the base contact portion is formed. The emitter region has, at a portion where the base region projects, a convex portion projecting in the same direction as the direction in which the base region projects. The base region has, at a portion where the emitter region projects, a concave portion. A base resistor region is expanded by the convex portion provided at the emitter region, thereby increasing the resistance value of the base resistor R.sub.B. Consequently, a power transistor having a wide area of safety operation and capable of performing operation in a stable manner can be obtained without an increase in size of the transistor.

REFERENCES:
patent: 3746949 (1973-07-01), Nienhuis et al.
patent: 4500900 (1985-02-01), Shimizu
patent: 4994880 (1991-02-01), Kato et al.
patent: 5068702 (1991-11-01), Giannella
patent: 5369298 (1994-11-01), Honda et al.

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