Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1993-03-03
1994-05-31
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257341, 257401, 257578, 257773, H01L 2702, H01L 2348
Patent
active
053171764
ABSTRACT:
A power transistor has a plurality of contacted, individual transistors. The contacts of these individual transistors are arranged at such intervals from one another that a temperature distribution results during operation that is substantially uniform for an intended power range of the transistor.
REFERENCES:
patent: 3704398 (1972-11-01), Fukino
patent: 3943546 (1976-03-01), Kaiser
patent: 4642668 (1987-02-01), Tacken
"Thermal Design Studies of High-Power Heterojunction Bipolar Transistors", by Gao et al., IEEE Transactions on Electron Devices, vol. 36, No. 5, May 1989, pp. 854-863.
"Emitter Ballasting Resistor Design for, and Current Handling Capability of A1GaAs/GaAs Power Heterojunction Bipolar Transistors", by Gao et al., IEEE Transactions on Electron Devices, vol. 38, No. 2, Feb. 1991, pp. 185-196.
"Steady-State Junction Temperatures of Semiconductor Chips", by R. D. Lindsted et al., IEEE Transactions on Electron Devices, vol. 19, No. 1, Jan. 1972, pp. 41-44.
"Uniform junction temperature A1GaAs/GaAs power heterojunction bipolar transistors on silicon substrates", by Gao et al., Appl. Phys. Letter 58 (10), Mar. 11, 1991, pp. 1068-1070.
Holzapfl Birgit
Schaper Ulrich
Prenty Mark V.
Siemens Aktiengesellschaft
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