Power transistor having multifinger contacts

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

257341, 257401, 257578, 257773, H01L 2702, H01L 2348

Patent

active

053171764

ABSTRACT:
A power transistor has a plurality of contacted, individual transistors. The contacts of these individual transistors are arranged at such intervals from one another that a temperature distribution results during operation that is substantially uniform for an intended power range of the transistor.

REFERENCES:
patent: 3704398 (1972-11-01), Fukino
patent: 3943546 (1976-03-01), Kaiser
patent: 4642668 (1987-02-01), Tacken
"Thermal Design Studies of High-Power Heterojunction Bipolar Transistors", by Gao et al., IEEE Transactions on Electron Devices, vol. 36, No. 5, May 1989, pp. 854-863.
"Emitter Ballasting Resistor Design for, and Current Handling Capability of A1GaAs/GaAs Power Heterojunction Bipolar Transistors", by Gao et al., IEEE Transactions on Electron Devices, vol. 38, No. 2, Feb. 1991, pp. 185-196.
"Steady-State Junction Temperatures of Semiconductor Chips", by R. D. Lindsted et al., IEEE Transactions on Electron Devices, vol. 19, No. 1, Jan. 1972, pp. 41-44.
"Uniform junction temperature A1GaAs/GaAs power heterojunction bipolar transistors on silicon substrates", by Gao et al., Appl. Phys. Letter 58 (10), Mar. 11, 1991, pp. 1068-1070.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Power transistor having multifinger contacts does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Power transistor having multifinger contacts, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power transistor having multifinger contacts will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1629497

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.