Power transistor drive circuit with improved short circuit prote

Electricity: electrical systems and devices – Safety and protection of systems and devices – With specific current responsive fault sensor

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361101, 3072964, 330207P, H02H 3087

Patent

active

049549170

ABSTRACT:
A gate drive circuit for an insulated gate bipolar transistor initially drives the gate to a first voltage potential which causes the transistor to partially turn on. A sensor detects when the transistor saturates, at which point the gate drive voltage is increased to increase the conductivity of the transistor and reduce its saturation voltage drop. If, however, a load coupled to the transistor is short circuited, the transistor will never reach saturation and will remain partially turned on at a point where it has increased short circuit current handling capability. In addition, once the transistor has been fully turned on, should a short circuit load condition occur, the transistor will drop out of saturation causing the drive circuit to reduce the gate voltage to increase the short circuit current handling capability of the transistor.

REFERENCES:
patent: 4306270 (1981-12-01), Miller et al.
patent: 4721869 (1988-01-01), Okado
A paper entitled "Short-Circuit Capability of IGBT (COMFET) Transistors".
An article entitled "IGBT Power Modules Provide Effective Inverter Performance" which appeared in the Jan., 1989 issue of PCIM Power Conversion and Intelligent Motion magazine.

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