Power transistor drive circuit with improved short circuit prote

Details Power transistor drive circuit with improved short circuit prote Power transistor drive circuit with improved short circuit prote

1991-01-30

1992-10-20

DeBoer, Todd E.

Electricity: electrical systems and devices

Safety and protection of systems and devices

Voltage regulator protective circuits

361 42, 361 58, 361 86, 323276, 323908, H02H 904

Patent

active

RE0341070

ABSTRACT:
A gate drive circuit for an insulated gate bipolar transistor initially drives the gate to a first voltage potential which causes the transistor to partially turn on. A sensor detects when the transistor saturates at which point the gate drive voltage is increased to increase the conductivity of the transistor and reduce its saturation voltage drop. If, however, a load coupled to the transistor is short circuited, the transistor will never reach saturation and will remain partially turned on at a point where it has increased short circuit current handling capability. In addition, once the transistor has been fully turned on, should a short circuit load condition occur, the transistor will drop out of saturation causing the drive circuit to reduce the gate voltage to increase the short circuit current handling capability of the transistor.

REFERENCES:
patent: 4306270 (1981-12-01), Miller et al.
patent: 4423457 (1983-12-01), Brajder
patent: 4719531 (1988-01-01), Okado et al.
patent: 4721869 (1988-01-01), Okado
Conference Record of the 1988 IEEE Industry Application Society Annual Meeting, Part I, Short-Circuit Capability of IGBT (Comfet) Transistors, IEE Catalog Number 88CH2565-0, pp. 615-619.
PCIM, IGBT Power Modules Pieride Effective Inverter Performance, Jan. 1989, pp. 76-81.

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